Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8016149 | Materials Letters | 2016 | 4 Pages |
Abstract
P-N junction diodes with excellent rectifying characteristics were prepared by segregating the Ge nanocrystals of Si1âxGex thin films deposited by co-sputtering. The current-voltage characteristics in darkness and under illumination were studied. The correlation between the p-n junction performance and the microstructure of the films is discussed, and the rectifying property became stronger as the fraction of Ge in the Si1âxGex films increased. The optical bandgap can be tuned by controlling the grain size in Ge and SiGe nanocrystals. The graded structure of the Si1âxGex photodiode is proposed to widen the light absorption region. The concept can be used to design high-efficiency photodiodes.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yao-Tsung Ouyang, Hsien-Chien Hsieh, Po-Chen Lin, Tsan-Hsien Tseng, Ching-Shun Ku, Hsin-Yi Lee, Albert T. Wu,