Improved mobility of sol-gel method processed transparent tin sulfide thin films

Transparent conductive tin sulfide is processed at room temperature by a cheap simple sol-gel method. The effect of annealing temperature on its crystal structures, morphologies, electrical and optical properties are systematically studied. High electron mobility of 48 cm2 V−1 s−1 and the average transmittance of 61% in 400-850 nm are achieved, indicating its potential application in invisible TFT.