Cyan-emitting BaZrSi3O9:Eu2+phosphors for near-UV based white light-emitting diodes

A series of Eu2+ions doped BaZrSi3O9 phosphors were synthesized by a solvothermal reaction method. The X-ray diffraction patterns of BaZrSi3O9:Eu2+phosphors confirmed their hexagonal structure after the samples were sintered above 1300 °C. The photoluminescence properties of BaZrSi3O9:Eu2+ phosphors were explored by measuring the excitation and emission spectra, and decay curves. The excitation spectra of BaZrSi3O9:Eu2+ phosphors consist of broad bands in the ultraviolet (UV) region due to 4f8→4f75d1 transition of Eu2+ ions. The sintering temperature and Eu2+ ion concentration of BaZrSi3O9:Eu2+ phosphors were optimized based on the dominant cyan emission intensity under the near-UV excitation. The optimum doping concentration of Eu2+ ions was 3 mol% and the critical distance was calculated to be 23.245 Å. These luminescent powders are expected to be a potential candidate for solid-state lighting based white light-emitting diodes and optical display systems.