Preparation of ScAlN film on Hastelloy alloys under different sputtering power

Piezoelectric film based on flexible substrate, which is conductive and heat-proof, is very promising for cantilever beams to constitute vibration energy collectors. Sc-doped AlN thin films based on Hastelloy alloys flexible substrate were prepared by DC reactive magnetron sputtering under sputtering power from 110 W to 200 W. The crystal quality of ScAlN films was investigated. Results show that the sputtering power greatly influences the preparation of c-axis-oriented ScAlN thin films. The crystal quality first increases and then decreases with increase of sputtering power, reaching the best crystalline state at 170 W, presenting full width at half maximum of 2.3°.