Preparation and characterization of ternary Al-In-O films on Y-stabilized ZrO2 substrates

The ternary Al-In-O (Al2xIn2−2xO3) films with different Al contents x[Al/(Al+In) atomic ratio] were prepared on the Y-stabilized ZrO2 (100) substrates by metal organic chemical vapor deposition (MOCVD) at 600 °C. The structural, optical and electrical properties of the films as a function of Al content (x=0.1-0.9) were investigated. With the increase of x from 0.1 to 0.9, a phase transition from the bixbyite In2O3 structure with a single orientation along (100) to the amorphous structure was observed. The average transmittances of the Al2xIn2−2xO3 films in the visible range were all over 76% and the optical band gap of the films was varied from 3.68 to 4.77 eV. The film with Al content of x=0.2 had the lowest resistivity of 7.82×10−3 Ω cm, a carrier concentration of 9.81×1019 cm−3 and a Hall mobility of 8.17 cm2 v−1 s−1.