Article ID Journal Published Year Pages File Type
8020338 Materials Letters 2014 4 Pages PDF
Abstract
SnO2 quantum dots@ZIF-8 is successfully synthesized via a simple in-situ epoxide precipitation route and investigated as an electrochemical pseudo-capacitor material in 6 M KOH electrolyte. Structural characterizations illustrate the dispersion of SnO2 quantum dots in the ZIF-8. The porous structure combined with SnO2 quantum dots maximizes the utilization of active material, resulting in a high specific capacitance. A maximum specific capacitance of the SnO2 quantum dots@ZIF-8 can reach up to 931 F g−1 at a scan rate of 5 mV s−1, which is far higher than SnO2 quantum dots (241 F g−1) and ZIF-8 (99 F g−1). Meanwhile, SnO2 quantum dots@ZIF-8 exhibits a good cycling stability over 500 cycles.
Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
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