Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8020338 | Materials Letters | 2014 | 4 Pages |
Abstract
SnO2 quantum dots@ZIF-8 is successfully synthesized via a simple in-situ epoxide precipitation route and investigated as an electrochemical pseudo-capacitor material in 6Â M KOH electrolyte. Structural characterizations illustrate the dispersion of SnO2 quantum dots in the ZIF-8. The porous structure combined with SnO2 quantum dots maximizes the utilization of active material, resulting in a high specific capacitance. A maximum specific capacitance of the SnO2 quantum dots@ZIF-8 can reach up to 931Â FÂ gâ1 at a scan rate of 5Â mVÂ sâ1, which is far higher than SnO2 quantum dots (241Â FÂ gâ1) and ZIF-8 (99Â FÂ gâ1). Meanwhile, SnO2 quantum dots@ZIF-8 exhibits a good cycling stability over 500 cycles.
Related Topics
Physical Sciences and Engineering
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Nanotechnology
Authors
Yilong Gao, Jianxiang Wu, Wei Zhang, Yueyue Tan, Jiachang Zhao, Bohejin Tang,