Article ID Journal Published Year Pages File Type
8020388 Materials Letters 2014 4 Pages PDF
Abstract
ZnxIn1−xS quantum dot-sensitized TiO2 NTs photoelectrodes were successfully achieved using a simple SILAR method. The ZIT (Zn/In=2:4) electrode shows remarkable photocurrent density.
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Related Topics
Physical Sciences and Engineering Materials Science Nanotechnology
Preview
Fabrication of ZnxIn1−xS quantum Dot-sensitized TiO2 nanotube arrays and their photoelectrochemical properties
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