Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8021328 | Materials Letters | 2013 | 4 Pages |
Abstract
We present details of the deposition of transparent and earth-abundant p-type CuBr films with high hole conductivity and the fabrication and characterization of a prototype solar cell based on p-CuBr/n-Si heterojunctions. p-type CuBr films with typical resistivities and hole concentrations of 7Ã10â1 Ω cm and 7.5Ã1019 cmâ3, respectively, are deposited by thermal evaporation followed by oxygen plasma treatment. The transparent p-type films show strong room temperature photoluminescence at ~2.97 eV. The current voltage (I-V) characteristics of the heterojunctions show good diode behaviour. Power conversion efficiency of ~2% was achieved for the heterojunction device without any optimization of the cell structure under AM 1.5 illumination condition with a short circuit current (Jsc) and open circuit voltage (Voc) of 13.2 mA/cm2 and 0.44 V, respectively.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
K.V. Rajani, S. Daniels, M. Rahman, A. Cowley, P.J. McNally,