| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8021959 | Materials Letters | 2013 | 4 Pages |
Abstract
A facile thermal annealing approach to prepare large-area, high quanlity and mostly single-layer N-doped graphene sheets using PAN thin film as the precursor. Pyrrolic-like N atoms are proposed an essential component in N-doped graphene sheets.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hui Gao, Lei Guo, Lanxi Wang, Yunfei Wang,