| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8022207 | Materials Letters | 2013 | 4 Pages |
Abstract
Pt-capped ZnO nanorods were synthesized by the thermal evaporation of a mixture of ZnO and graphite powder at 900 °C followed by Pt sputter-deposition and thermal annealing. Photoluminescence (PL) showed that the intensity of near-band edge (NBE) emission of ZnO nanorods was enhanced significantly by Pt-capping and annealing in a H2 atmosphere. The intensity ratio of NBE emission to the deep level emission, INBE/IDL of the Pt-capped ZnO nanorods after annealing in a H2 atmosphere was â¼11 times higher than that of the unannealed, uncapped ZnO nanorods. The increase of the INBE/IDL might be due to a combination of carrier transfer from the defect level to the Fermi level of Pt nanoparticles, surface plasmon resonance in Pt nanoparticles and hydrogen passivating deep level defects.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hyunsung Ko, Sunghoon Park, Youngho Mun, Chongmu Lee,