| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8022266 | Materials Letters | 2013 | 4 Pages |
Abstract
High density aluminum nitride nano-needles with sharp tips have been synthesized on Si substrate by pre-treating the precursors with aqueous NH3 via facile chemical vapor deposition method without any catalyst. The as synthesized nano-needles have been characterized by XRD, FESEM, EDX, HRTEM and SAED. The observed diameter of the nano-needles is 40-100 nm having sharp tips. The AlN nano-needles exhibited amazing turn-on field of 5.65 V μmâ1 (0.01 mA cmâ2) at room temperature which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The room-temperature PL emission peak at 486 nm (2.55 eV) indicates that AlN nano-needles also have potential application in light-emitting nano-device.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Sajjad Hussain Shah, Ghulam Nabi, Waheed S. Khan, Abdul Majid, Chuanbao Cao, Safdar Ali, Mudassar Hussain, Azeem Nabi, Saadi Ishaq, Faheem K. Butt,