| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8022821 | Materials Letters | 2012 | 4 Pages |
Abstract
⺠NiO doped p-type AZO films was first prepared by sol-gel method. ⺠NiO:AZO films showed a polycrystalline Ni2O3 (202) phase. ⺠p-type conductivity achieved by annealing in N2/H2forming gas at 550 °C. ⺠p-n junction (ITO/NiO:AZO) revealed rectifying I-V characteristics. ⺠The mean optical transmittance of NiO:AZO films >80 %.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
Lei Li, K.S. Hui, K.N. Hui, H.W. Park, D.H. Hwang, Shinho Cho, S.K. Lee, P.K. Song, Y.R. Cho, Heesoo Lee, Y.G. Son, W. Zhou,