Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8023302 | Surface and Coatings Technology | 2018 | 8 Pages |
Abstract
IrO2-Ta2O5/Ti anodes were thermally pretreated by means of baking and continuous heating, and then thermal decomposition at 450â¯Â°C for 30â¯min. To prepare an IrO2-Ta2O5/Ti anode, a Ti substrate was dipped in the precursor, baked at 80 or 90â¯Â°C for different periods, and then thermally decomposed at 450â¯Â°C for 30â¯min in the air furnace. The electrochemical properties of prepared IrO2-Ta2O5/Ti anodes were evaluated through their voltammetric charges measured in the 1â¯M H2SO4 solution and their performance lives tested with 2 Acmâ2 in the 1â¯M H2SO4â¯+â¯0.5â¯M Na2SO4 solution. Microstructures of prepared IrO2-Ta2O5/Ti anodes were characterized with x-ray diffractometer. The chemical compositions and surface morphologies of prepared IrO2-Ta2O5/Ti anodes were analyzed with scanning electron microscope equipped with energy-dispersive x-ray spectrometer. Based on the results of x-ray diffraction, only IrO2-diffracted peaks were detected from prepared IrO2-Ta2O5/Ti anodes. A mud-crack surface structure was seen from prepared IrO2-Ta2O5 coatings. The crack density and the crack width of an IrO2-Ta2O5 coating were obviously affected by different thermal pretreatments of baking methods and heating rates. The crack width of IrO2-Ta2O5 coating increased with an increasing the baking time. A relatively high voltammetric charge can be found from the IrO2-Ta2O5/Ti anode with wide cracks and high crack density. On the other hand, long lifetime values were detected from the IrO2-Ta2O5/Ti anode with a crack width more than 2â¯Î¼m. The highest voltammetric charge was detected from the IrO2-Ta2O5/Ti anode prepared through baking at 90â¯Â°C for 180â¯s. On the other hand, the longest lifetime was found from the IrO2-Ta2O5/Ti anode pretreated with continuous heating at a rate of 7â¯Â°C/min.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ching An Huang, Shu Wei Yang, Po Liang Lai,