Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8023500 | Surface and Coatings Technology | 2018 | 6 Pages |
Abstract
Silica glass can be used as optical windows of nuclear facilities, optical fibers, and different electronic components in high radiation level environments. The study of structural changes and other effects created by ion irradiation in silica glass is important both for the performance study in above applications and the mechanical study of ion implantation modifications of silica for manufacture advanced materials. A low-energy ion beam induced luminescence (IBIL) set-up was developed at the 200â¯kV Ion Implanter of Beijing Normal University to measure the dynamic process involved in the damage creation of different materials. In-situ luminescence measurements were performed on silica glasses under the irradiation of 40â¯keV, 100â¯keV, 180â¯keV H+, He+ and 100â¯keV, 180â¯keV O+ at room temperature. The evolution of two main emission bands under 100â¯keV H+, He+, and O+ irradiation was discussed. The IBIL kinetics studied in this work was different to that observed for MeV-ions. The saturated luminescence induced by H+, He+ presented almost linear relationship with electronic energy deposition of incident ions. The roles of electronic and nuclear stopping power at different ion energies were discussed to explore the origin of luminescence. Ex-situ optical absorption spectra were measured to monitor optical properties and point defects concentration evolution with H+ and O+ fluence.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yingjie Chu, Guangfu Wang, Li Zheng, Menglin Qiu, Peng Yin, Mi Xu,