Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition

As an example, AlN was used to infiltrate porous sintered silicon carbide (SiC). Both AlN deposited by PE-ALD and by T-ALD operating with exposure mode deposited at 400 °C were attempted. Even though, there is a greater risk for TMA precursor to decompose at 400 °C, infiltration of AlN was more successful by T-ALD operating with exposure mode.