Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8023606 | Surface and Coatings Technology | 2018 | 7 Pages |
Abstract
Al-doped ZnO thin films were deposited using reactive high power impulse magnetron sputtering at substrate temperatures between room temperature and 600â¯Â°C. Two sample series with different oxygen partial pressures were studied. The films with the lowest resistivity of 3â¯Ãâ¯10â4â¯Î©â¯cm were deposited at the highest substrate temperature of 600â¯Â°C. The improvement of the electrical properties could be related to an improvement of the mobility due to the improved crystallinity. This improved crystallinity also increased the stability of the films towards ambient moisture. On the other hand, the detrimental influence of negative oxygen bombardment could be avoided, as the HiPIMS process can take place in the metal or transition mode even at relatively high oxygen partial pressures.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Martin Mickan, Ulf Helmersson, David Horwat,