Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8024548 | Surface and Coatings Technology | 2018 | 10 Pages |
Abstract
This paper characterises the high thermal conductivity thin-film substrate systems and the interface thermal resistances between the films. First, three-omega (3Ï) method was proposed and verified, obtaining a reliable thermal conductivity measurement at shallow thermal-penetration depths. The method was then applied to a thin-film/substrate system to identify the individual thermal conductivities. The interface thermal resistance between the thin films was then successfully characterised with the aid of theoretical modelling and experimental measurements. As an example of the method application in the IC industry, the AlN/Si systems were investigated. The study identified that the thermal conductivity of the 2 μm-thick AlN film in an AlN/Si system is 172.1 W/mK and the AlN/Si interface thermal resistance is 1.796 Ã 10â 9 m2 K/W.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Alireza Moridi, Liangchi Zhang, Weidong Liu, Steven Duvall, Andrew Brawley, Zhuangde Jiang, Shuming Yang, Changsheng Li,