| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8024719 | Surface and Coatings Technology | 2017 | 7 Pages |
Abstract
Si concentration in the films increased linearly with an increasing TMS/hydrocarbon ratio for both hydrocarbon gases, being the determining factor for the ID/IG ratio and SiC concentration of Si-DLC. In other words, we can determine the ID/IG ratio and SiC bond concentration in Si-DLC by controlling the TMS/hydrocarbon ratio. In addition, much higher deposition speed and higher H concentration are obtained by MVP using C2H2 than CH4. These findings, or the effect of gas source on the film structure of Si-DLC by MVP, would be an important design principle in designing Si-DLC for desired film structure and hardness, and better tribological performance.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
Ippei Tanaka, Toshimitsu Nakano, Hiroyuki Kousaka, Hiroyuki Hashitomi,