| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8025257 | Surface and Coatings Technology | 2016 | 7 Pages |
Abstract
120 keV Xe+ (fluence 1 â 1016 ion cmâ 2) irradiation of C/Si made SiC rich layer. The material covered with the SiC rich layer was subjected to polysilicon etchant. RBS spectra were recoded before and after etching; there is no differenc is content. The SiC rich layer provides perfect protection against etching.138
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Authors
G. Battistig, S. Gurbán, G. Sáfrán, A. Sulyok, A. Németh, P. Panjan, Z. Zolnai, M. Menyhárd,