Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8026545 | Surface and Coatings Technology | 2015 | 5 Pages |
Abstract
The surface and gas phase reactions caused by trichlorosilane and SiHx in ambient hydrogen were studied in order to improve the silicon film deposition process. The concentration of trichlorosilane exhausted from the reactor was measured by a quadrupole mass spectra analyzer. Simultaneously, the byproduct deposition that occurred at the exhaust was measured by a quartz crystal microbalance. Based on the measurements, SiHx is considered to increase the trichlorosilane consumption efficiency and to decrease the SiCl2 production by increasing the silicon formation rate from the surface intermediate species, SiCl2. Additionally, trichlorosilane and hydrogen were considered to be reproduced from SiHx and the hydrogen chloride caused by the silicon film formation.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ayumi Sakurai, Ayumi Saito, Hitoshi Habuka,