| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8026693 | Surface and Coatings Technology | 2015 | 15 Pages |
Abstract
A study of chemical products formed on sapphire (0001) during chemical-mechanical polishing is presented. The results demonstrated that the formation and removal of chemical products both proceeded from the hexagonal close-packed sapphire Al-O layers described as atomic terraces, and the material removal rule of sapphire (0001) during chemical-mechanical polishing is the regular removal of chemical products formed from the atomic terraces, which were successfully characterized by AFM with super-sharp scanning probes. Besides, we also found that the surface with screw dislocations could not be polished completely by CMP due to the crystal distortion energy, and a hard polishing pad could remove scratches more effectively than a soft one
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Xiaolei Shi, Guoshun Pan, Yan Zhou, Li Xu, Chunli Zou, Hua Gong,