| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8026903 | Surface and Coatings Technology | 2014 | 7 Pages |
Abstract
Synthesis of thin niobium nitride (NbN) layers by High Temperature Chemical Vapor Deposition (HTCVD) is presented and the crystallographic orientations are investigated during heteroepitaxial growth on (0001)Al2O3, (0001)AlN template and 112¯0Al2O3. The HTCVD NbN layers are ex-situ characterized by means of X-ray diffraction (XRD) methods, Raman spectroscopy and Transmission Electron Microscopy (TEM). Depending on the deposition temperature, hexagonal NbN or fcc (face-centered cubic) δ-NbN is obtained. Orientation relationships between the fcc δ-NbN layer with respect to the substrates are given. We discuss the role of an AlN layer as a possible protective layer of the sapphire for the synthesis of fcc δ-NbN.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Frédéric Mercier, Stéphane Coindeau, Sabine Lay, Alexandre Crisci, Matthieu Benz, Thierry Encinas, Raphaël Boichot, Arnaud Mantoux, Carmen Jimenez, François Weiss, Elisabeth Blanquet,