Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8027398 | Surface and Coatings Technology | 2014 | 6 Pages |
Abstract
Amorphous carbon nitride (a-CNx) films were deposited on silicon substrates using pulsed laser deposition technique (PLD) with a carbon nitride target and a negative bias voltage up to â 120 V. The microstructure, chemical composition, bonding configuration and mechanical properties of the films were characterized by using scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, nanoindentation and ball-on-disc abrasion test. The results show that the negative bias voltage promotes the formation of sp3 hybridization bonding and leads to a great improvement of nitrogen content (up to 38 at.%) in the films. With an increasing bias voltage from â 40 V to â 120 V, the nitrogen content and the fraction of sp3 hybridization bonding decrease, leading to an increase in graphitization of the films. A direct dependence of the hardness on the content of sp3 hybridization bonding is observed. The friction coefficient of the films ranges from 0.20 to 0.28. The film deposited at a bias voltage of â 40 V presents the highest hardness value of 8.3 GPa.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Xiao-hua Zheng, Fang-er Yang, Li Chen, Zhan-ling Chen, Ren-guo Song, Xiang-hua Zhang,