Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8029743 | Surface and Coatings Technology | 2013 | 5 Pages |
Abstract
The Sn content in GeSn was carefully determined from the mismatch, both parallel and perpendicular, to the growth direction when the Poisson ratio was calculated for a certain Ge-Sn composition. The X-ray results were excellently consistent with Rutherford Backscattered Spectroscopy (RBS). Strain relaxed GeSn layers were also used as virtual substrate to grow tensile-strained Ge layers. The Ge cap layer had low defect density and smooth surface which makes it a viable candidate material for future photonic applications.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
A. Jamshidi, M. Noroozi, M. Moeen, A. Hallén, B. Hamawandi, J. Lu, L. Hultman, M. Ãstling, H. Radamson,