| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8030003 | Surface and Coatings Technology | 2013 | 9 Pages |
Abstract
A CeO2 dispersed δ-Ni2Al3 was formed by partially aluminizing an electrodeposited Ni film containing CeO2. The aluminide/Ni-CeO2 coating system itself quickly formed a CeO2-rich diffusion barrier between aluminide and Ni during annealing in vacuum at 1000 °C. A model for the formation of the diffusion barrier was proposed, based on the characterization of the evolution with time of the phase compositions of the aluminide at the interface.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
X. Tan, X. Peng, F. Wang,