| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8030068 | Surface and Coatings Technology | 2013 | 5 Pages |
Abstract
⺠CeO2-x films were deposited onto Si substrates by pulsed magnetron sputtering. ⺠Rapid thermal annealing was performed to change the stoichiometry of CeO2-x films. ⺠The phase transition in CeO2-x films was due to the formation of oxygen vacancies. ⺠The hardness and elastic modulus were performed as a function of RTA temperature.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
In-Wook Park, Jianliang Lin, John J. Moore, Marat Khafizov, David Hurley, Michele V. Manuel, Todd Allen,