| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8030107 | Surface and Coatings Technology | 2013 | 6 Pages |
Abstract
⺠The SiC thin film formation process entirely at low temperature was developed. ⺠A SiC CVD film was formed on aluminum and stainless steel substrate surface. ⺠A reactive substrate surface was prepared using argon plasma or silicon interlayer. ⺠The precursor was monomethylsilane gas.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Hitoshi Habuka, Masaki Tsuji,