| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8030339 | Surface and Coatings Technology | 2013 | 9 Pages |
Abstract
⺠An original DLICVD process for the growth of a-SiC:H coatings ⺠High growth rate of amorphous SiC using single-source precursors ⺠Influence of toluene vapor in CVD of SiC.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
G. Boisselier, F. Maury, F. Schuster,