| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8030583 | Surface and Coatings Technology | 2013 | 5 Pages |
Abstract
⺠We formed silicon oxide films at 250 °C using silicone oil and ozone gas. ⺠To reduce the impurities, the silicon oxide film was annealed with UV and alcohols. ⺠SiOH bonds were displaced by the SiOCH3 bonds due to the alcohol treatment. ⺠The cage SiOSi bonds were reduced by the UV irradiation. ⺠After the UV treatment and alcohol treatment, the dielectric property was improved.
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Authors
Takuya Ito, Takuya Matumoto, Kensuke Nishioka,