| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8030916 | Surface and Coatings Technology | 2012 | 5 Pages |
Abstract
⺠SiCxNy:H thin films deposited by H2/N2/Ar/hexamethyldisilazane microwave plasma ⺠Modification of N2/H2 ratio leads to important variations of C and N film content. ⺠Refractive index (1.75 < n < 2.15) and band gap (3.5 eV < Eg < 5 eV) thin film can be tuned. ⺠Refractive index and band gap values are closely related to SiC bonding density.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Simon Bulou, Laurent Le Brizoual, Patrice Miska, Ludovic de Poucques, Jamal Bougdira, Mohammed Belmahi,