| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8031878 | Surface and Coatings Technology | 2012 | 4 Pages |
Abstract
âºExperimentally, there is significantly lower stress in c-BN:O compared to c-BN. âºOxygen occupies part of the N positions in the BN lattice. âºIf N (or B) ion is implanted next to a lattice O atom, the atoms exchange places. âºO diffuses away, N (or B) does not (N lattice sites can be occupied by N2 pairs). âºThus, the compressive stress generated by implanted atoms decreases.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
J. Houska, S. Ulrich,