Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8032466 | Thin Solid Films | 2018 | 25 Pages |
Abstract
Nonlinear optical rectification in symmetric coupled AlxGa1âxAs/GaAs quantum wells with external electric field is investigated using numerical method and compact density matrix approach. Our results reveal that for the resonant peaks of optical rectification, a blue shift is exhibited for increasing electric field, while a red shift followed by a blue shift is exhibited for increasing barrier or well widths. The resonant peak values of optical rectification can reach a maximum value by an appropriate choice for the electric field, the barrier or well widths. Our studies pave the way for the design, optimization and applications of quantum-sized nonlinear optoelectronic devices.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Guanghui Liu, Kangxian Guo, Zhongmin Zhang, Hassan Hassanbadi, Liangliang Lu,