Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8032513 | Thin Solid Films | 2018 | 4 Pages |
Abstract
Cubic Ti1âxAlxN (xâ¯=â¯0.5, 0.6) films were deposited using RF (radio frequency) magnetron sputtering and cathodic arc ion plating methods on a thermally oxidized Si substrate to evaluate the temperature dependence of their electrical characteristics by Hall measurements from 10â¯K to 295â¯K. The temperature dependence of the hole concentration and the electrical conductivity above about 200â¯K shows that cubic TiAlN in this study had semiconductor characteristics, indicating that the hole conduction in the valence band is dominant in a high temperature range above about 200â¯K. In contrast, the variable range hopping conduction is dominant in a low temperature range below about 100â¯K. In addition, the hole mobility of Ti0.4Al0.6N deposited by RF sputtering increased with increasing temperature above 220â¯K, even though the phonon scattering increases. This result shows that a disordered grain boundary between polycrystalline TiAlN acts as a barrier layer for the hole conduction.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Masahiro Yoshikawa, Daiki Toyama, Toshiaki Fujita, Noriaki Nagatomo, Toshiki Makimoto,