Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8032548 | Thin Solid Films | 2018 | 8 Pages |
Abstract
To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H2/(H2â¯+â¯Ar). By decreasing the gas flow-rate ratio from 55% to 11%, the hydrogen content in the films decreased, and the density of sp3 carbon atoms in the films increased, whereas their surface roughness increased. At the gas flow-rate ratio of 11%, we produced a-C:H films with a high bulk density of 1830â¯kg/m3 at a high deposition rate of 81.1â¯nm/min.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Taojun Fang, Kenji Yamaki, Kazunori Koga, Daisuke Yamashita, Hyunwoong Seo, Naho Itagaki, Masaharu Shiratani, Kosuke Takenaka, Yuichi Setsuhara,