Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8032551 | Thin Solid Films | 2018 | 5 Pages |
Abstract
Ta films formed on Si(100) and quartz substrates by sputtering technique usually lead to a textured β-Ta with tetragonal crystal lattice. The β-Ta film has a high resistivity. As a comparison, low resistivity α-Ta with cubic crystal lattice can be formed by sputtering on TaN. Crystal study shows that the sputtered TaN film has a preferred (111) growth plane and the α-Ta has a preferred (110) growth plane. Both are textured films. The growth mechanism of the α-Ta on TaN is ascribed to epitaxy.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jianyuan Wang, Jianfang Xu, Wei Huang, Jun Li, Shihao Huang, Hongkai Lai, Cheng Li, Songyan Chen,