Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8032600 | Thin Solid Films | 2018 | 7 Pages |
Abstract
In this study, we investigated the electronic structure of Si-doped ZrO2 thin films. We used atomic layer deposition to deposit Si-doped ZrO2 thin films. This method has many advantages such as excellent step coverage, low process temperature, and ultrathin growth. We found that proper Si doping, which affects Si distribution in the ZrO2 and therefore its electronic band structure, is necessary for leakage current reduction.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Kunyoung Lee, Woochool Jang, Hyunjung Kim, Heewoo Lim, Bumsik Kim, Hyungtak Seo, Hyeongtag Jeon,