Leakage current suppression in spatially controlled Si-doped ZrO2 for capacitors using atomic layer deposition

In this study, we investigated the electronic structure of Si-doped ZrO2 thin films. We used atomic layer deposition to deposit Si-doped ZrO2 thin films. This method has many advantages such as excellent step coverage, low process temperature, and ultrathin growth. We found that proper Si doping, which affects Si distribution in the ZrO2 and therefore its electronic band structure, is necessary for leakage current reduction.