Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8032612 | Thin Solid Films | 2018 | 4 Pages |
Abstract
We report on the characteristics of reduced graphene oxide (rGO)/GaN Schottky diodes in which the reduction process is performed at various temperatures. The Schottky barrier height of the rGO/GaN Schottky diode peaks at 1.07â¯eV with the reduction temperature of 650â¯Â°C, caused by changes in the O-containing functional groups and surface Fermi-level pinning during thermal reduction. The interdigitated rGO/GaN metal-semiconductor-metal photodiode using GO reduced at 650â¯Â°C exhibits a responsivity of 0.128 A/W under 365-nm illumination, with a sharp cutoff near the GaN energy bandgap.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Bhishma Pandit, Jaehee Cho,