Impacts of substrate bias and dilution gas on the properties of Si-incorporated diamond-like carbon films by plasma deposition using organosilane as a Si source

We have deposited silicon-incorporated diamond-like carbon (Si-DLC) films by plasma-enhanced chemical vapor deposition using monomethylsilane (CH3SiH3; MMS) as a Si source, and systematically investigated the impacts of substrate bias and dilution gas on the mechanical and tribological properties of the Si-DLC films. The use of a pulse bias and hydrogen dilution is very effective in suppressing the generation of particles during the deposition. The internal stress of the Si-DLC films deposited using the pulse bias tended to be lower than that of the Si-DLC films deposited using a DC bias, while the hydrogen dilution resulted in the increase in the internal stress. On the other hand, the Si-DLC film deposited with H2 using the pulse bias showed the highest adhesion strength and the lowest friction coefficient. The use of the pulse bias resulted in the increase in the wear resistance.