Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8032749 | Thin Solid Films | 2018 | 33 Pages |
Abstract
The geometric, electronic and magnetic properties of N-doped zigzag and armchair silicene/silicane nanoribbons (Z- and A-SSNRs) have been studied by using density functional theory calculations, where silicane is the fully hydrogenated silicene. It is confirmed that the substitution of N for Si atom is preferred at the silicene/silicane interface and silicane edge. The large hydrogen diffusion energy barriers indicate high interface stability of the N-doped SSNRs. When the doping concentration is larger than a critical value, the doped Z-SSNR with N at silicene/silicane interface shows ferromagnetic semiconducting character with a magnetic moment of about 1â¯Î¼B, while the doped Z-SSNR with N at silicane edge shows metallic character and tuneable magnetic moments dependent on the silicane width. For armchair SSNR, the A-SSNR with doping N at silicene/silicane interface is a semiconductor with a local magnetic moment of about 1â¯Î¼B. However, the A-SSNR with doping N at silicane edge shows nonmagnetic metallic state. In addition, the Z- and A-SSNRs with doping N at silicene/silicane interface exhibit decreased band gaps and oscillatory band gaps, respectively, with increasing silicene width. This work provides fundamental insights for the applications of SSNRs in nanoelectronics devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Q.G. Jiang, J.F. Zhang, Z.M. Ao, H.J. Huang, Y.P. Wu,