Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8032858 | Thin Solid Films | 2018 | 6 Pages |
Abstract
We present results on the investigation of the substrate bias effect on the growth behavior of iridium films deposited on A-plane sapphire by radio frequency (rf) sputtering at low substrate temperatures. Films deposited without substrate bias were compared to films deposited with simultaneous application of a second rf-plasma on the substrate. Resulting films were characterized by scanning electron microscopy, X-ray diffraction, and electron backscattering diffraction. We find that the application of an additional substrate bias has a strong effect on the growth behavior of Ir in such a way that preferential growth of iridium (001) on sapphire (11â20) at high deposition rates and at substrate temperatures as low as 350â¯Â°C becomes feasible.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Meyer Frank, Oeser Sabine, Graff Andreas, Reisacher Eduard, Carl Eva-Regine, Fromm Alexander, Wirth Marco, Groener Lukas, Burmeister Frank,