Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8032876 | Thin Solid Films | 2018 | 5 Pages |
Abstract
An atmospheric-pressure plasma deposition system was developed and used to deposit intrinsic hydrogenated microcrystalline silicon (μc-Si:H) thin films for μc-Si:H thin film solar cells. The helium (He) gas concentration in plasma increased Raman crystallinity (Xc) of μc-Si:H, which was a critical parameter to determine photovoltaic performance. In addition, dependence of Xc on the He concentration is shown to be closely related to the atomic hydrogen flux during film growth, which is evidenced by plasma diagnostics derived from in situ optical emission spectroscopy measurements. Those analysis contributed to achieve impressive photovoltaic performance - namely, a power conversion efficiency of 4.60%, an open-circuit voltage of 0.52â¯V, a short-circuit current density of 13.62â¯mA/cm2, and a fill factor of 0.65, which is the first experimental demonstration of μc-Si:H thin film solar cells fabricated with the atmospheric-pressure plasma deposition under very high working-pressure regime at 13.3â¯kPa.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jung-Dae Kwon, Johwa Yang, Jin-Seong Park, Dong-Won Kang,