Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8032982 | Thin Solid Films | 2018 | 20 Pages |
Abstract
In this report Molecular Beam Epitaxy (MBE) is shown to produce self-aligned platinum silicide (PtSi) nanoclusters and nanowires on Si (111) substrate near the eutectic point (T = 978 °C and 67 at.% Si) of the platinum silicon system. With an added silicon source in the MBE annealing chamber, the formation of two different silicon steps (straight and wave-like) is reported. The steps determine the position and the shape of the thermomigrating PtSi droplets. Nanoclusters preferentially form in the triple point of the wave-like steps while nanoclusters that form on the straight steps combine and grow into silicide nanowires.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Z.M. Khumalo, M. TopiÄ, C. Comrie, B. Opperdoes, A.J. van Vuuren, M. Blumenthal,