Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8033025 | Thin Solid Films | 2018 | 22 Pages |
Abstract
In this study, GaAs crystals were grown by chemical beam epitaxy on nominal (001) Si substrate over Ge nano-seeds placed within nano-holes opened through a 0.6Â nm silica layer. GaAs crystal morphology and atomic organization at the interface between Ge and GaAs were studied by using complementary Scanning Transmission Electron Microscopy, energy dispersive X-ray spectrometry and dark-field electron holography. Fourfold symmetry GaAs crystals were obtained and found to be completely relaxed and twin free. Thus, the use of Ge nano-seeds to initiate the growth of GaAs results in the suppression of twins previously observed for direct GaAs growth on nominal (001) Si. Nevertheless, anti-phase domains were detected. A simple atomistic model is proposed which explains how Anti-Phase Boundaries develop at the junctions between Ge {113} facets, and {113} and {111} facets for As-stabilized GaAs growth.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Marie Coste, Timothée Molière, Nikolay Cherkashin, Géraldine Hallais, Laëtitia Vincent, Daniel Bouchier, Charles Renard,