Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8033264 | Thin Solid Films | 2017 | 22 Pages |
Abstract
Nonpolar ZnO films were grown on r-plane sapphire substrates through the reaction between dimethylzinc (DMZn) and high-temperature H2O, the latter produced by the Pt-catalyzed reaction between H2 and O2. The resulting ZnO films were characterized using atomic force microscopy, X-ray diffraction, and photoluminescence (PL) measurements. They were found to have an anisotropic surface morphology with stripe arrays, and exhibited a diffraction peak associated with ZnO (11-20) index planes. The PL spectra indicated anisotropy in polarization between the directions parallel and perpendicular to the c-axis. The band-edge luminescence at 3.3Â eV exhibited a maximum when the electric field vector E was perpendicular to the c-axis (parallel to the [1-100] direction) and another minimum when E was parallel to the c-axis. The angular dependence of the linear polarization of the band-edge luminescence was large for ZnO films grown at low temperatures. The large degree of polarization observed for low-temperature growth is thought to be due to the film geometry.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Ariyuki Kato, Shotaro Ono, Munenori Ikeda, Ryouichi Tajima, Yudai Adachi, Kanji Yasui,