| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8033344 | Thin Solid Films | 2017 | 23 Pages |
Abstract
We present the memristive (memory resistive) behavior in two different pulsed laser deposited BaTiO3/Nb doped SrTiO3 junctions. The first junction is controlled by space charge limited current (SCLC) conduction while the post-annealed junction is dominated by Schottky emission. The latter junction displays better ferroelectric and memristive properties (with an order of magnitude higher OFF/ON resistance ratio) as compared to the former junction with SCLC conduction. We attribute the improved behavior of the latter junction to the reduction of oxygen vacancies due to post-annealing of the film.
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Authors
Pooja Singh, P.K. Rout, Manju Singh, R.K. Rakshit, Anjana Dogra,