Synthesis and electrical properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 epitaxial thin films on Si wafers using chemical solution deposition

Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT) has attracted a great deal of attention for its use in capacitors, piezoelectric actuators, sensors, and optical devices in integrated circuits. For these applications, epitaxially grown PMN-PT thin films on Si wafers are required. This paper describes the first trial in fabricating epitaxially grown PMN-PT thin films on a LSCO/CeO2/YSZ buffered Si substrate using chemical solution deposition (CSD). High-quality buffer layers make the epitaxial growth of PMN-PT thin films possible, even by CSD. Despite very thin films that have thicknesses of 170 nm, the resulting PMN-PT thin films exhibit good electrical properties, such as a high dielectric constant of 1400 and well-defined P-E hysteresis loops.