Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8033684 | Thin Solid Films | 2016 | 7 Pages |
Abstract
Cube-textured Ni(001) foils have been considered as a viable alternative substrate to grow high quality functional films for large area optoelectronic devices. In this work, we report the heteroepitaxial growth of CaF2(001) films on cube-textured Ni(001) foils at 350-600 °C with in-plane orientation of CaF2[110]//Ni[100] and CaF2[1-10]//Ni[010] with 45° rotation respect to the Ni(001) substrate. Unlike CaF2(111)/Ni(001) films where there exist four independent rotational domains with rotational domain boundaries, CaF2(001)/Ni(001) contains no rotational domains or rotational domain boundaries. This makes CaF2(001)/Ni(001) films better candidates as templates for the growth of high quality functional semiconductors. We also demonstrate that Ge(001) film with no rotational domains and with a grain size of ~ 50 μm similar to that of the Ni substrate can be grown on the CaF2(001) buffered Ni substrate.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Liang Chen, Weiyu Xie, Gwo-Ching Wang, Ishwara Bhat, Shengbai Zhang, Amit Goyal, Toh-Ming Lu,