Updated insight into the use of μc-Si:H n-layers in a-Si:H solar cells

Although a-Si:H solar cells have great potential in different applications, enhancing their efficiency is still a challenge. An approach to increase the short-circuit current of single junction a-Si:H pin solar cells consists on using μc-Si:H in the n-layer. In this paper we compare the properties of structures with a-Si:H n-layers and a μc-Si:H one. We also developed a precise and complete simulation model for further study of the involved electrical variables. For the simulation of the structure with μc-Si:H a thermionic model must be used. The data was analyzed through the scope of recent findings which highlight the role of conductivity difference in the carrier transport of illuminated solar cells.