Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8033851 | Thin Solid Films | 2015 | 7 Pages |
Abstract
Mn doped ZnO films and wires, having different manganese concentrations were synthesized by thermal oxidation of the corresponding ZnMn alloy films and wires electrodeposited on a gold substrate. Structural and optical properties were addressed with scanning electron microscopy, X-ray diffraction (XRD), Raman scattering and photoluminescence (PL). To estimate the manganese concentration in Mn doped ZnO films, X-ray photoelectron spectroscopy was used. XRD patterns indicate that the incorporation of Mn2 + ions into the Zn2 + site of ZnO lattice takes place. Quenching of the ZnO PL appears due to Mn2 + ions in the ZnO lattice. Moreover, a significant decrease in the green emission of ZnO is reported in the case of the Mn doped ZnO wire array with a Mn concentration of 1.45%. The wurtzite ZnO has a total of 12 phonon modes, namely, one longitudinal acoustic (LA), two transverse acoustic (TA), three longitudinal optical (LO), and six transverse optical branches. Compared to the undoped ZnO, a gradual up-shift of the Raman lines assigned to the 2LA and A1 (LO) vibrational modes, from 482 and 567 cmâ 1 to 532 and 580 cmâ 1, respectively, takes place for the Mn doped ZnO films having a Mn concentration between 2 and 15%. Additionally, in the case of the Mn doped ZnO films with 7 and 15% Mn concentration, Raman spectra show the appearance and increase in the relative intensity of the ZnO Raman line assigned to the TA + LO vibrational mode in the 600-750 cmâ 1 spectral range. For the Mn-doped ZnO wires, the presence of the Raman line peaking at 527 cmâ 1 confirms the insertion of Mn2 + ions in ZnO lattice.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
M. Sima, L. Mihut, E. Vasile, Ma. Sima, C. Logofatu,