Study of surface blistering in GaN by hydrogen implantation at elevated temperatures

We have investigated mechanisms of ion-cut in H2+-implanted GaN by analyzing microstructural features of H2+-implanted GaN at room temperature, 573 K and 723 K. Using optical microscopy and transmission electron microscopy, it was found that the in-plane compressive stress induced by the H-implantation was necessary for H-platelet nucleation and growth. The control of implantation temperature is crucial for creating sufficient in-plane compressive stress to induce surface blistering.